SiC has excellent thermal resistance, corrosion resistance, acid resistance, thermal shock resistance, and this features makes SiC as a promising material for high temperature semiconductor/ structural material / semiconductor subsidiaries. Chemically vapor deposited SiC directly forms solid SiC from the gas containing Si and C and accordingly, pure, dense SiC can be obtained through low temperature(1200-1500℃) without sintering preparation.

CVD-SiC has been applied in various industry fields, representatively in semiconductor wafer process susceptor, anti-scratch coating, optical high energy mirror, solar concentrator, astronomical telescope and large lightweight mirror.